C4dt01930j 16666..16672 ++

نویسندگان

  • E. Østreng
  • H. H. Sønsteby
  • S. Øien
  • O. Nilsen
  • H. Fjellvåg
چکیده

Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)3 + H2O/O3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 °C, respectively. The crystal structures of NaOBu and KOBu were determined by single crystal diffraction revealing hexamerand tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8’’ wafer scale.

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تاریخ انتشار 2014